2N5551 Bipolar Transistor

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Characteristics of 2N5551 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.6 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 80 to 250
  • Transition Frequency, min: 100 MHz
  • Noise Figure, max: 8 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Complementary PNP transistor

The complementary PNP transistor to the 2N5551 is the 2N5401.