2N5401 Bipolar Transistor

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Description

Characteristics of 2N5401 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.6 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 60 to 240
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Complementary NPN transistor

The complementary NPN transistor to the 2N5401 is the 2N5551.