S8550 Bipolar Transistor

1.00

In stock (can be backordered)

Spread the love

Description

Characteristics of S8550 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 85 to 300
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Complementary NPN transistor

The complementary NPN transistor to the S8550 is the S8050.