A1015 Bipolar Transistor

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Description

Characteristics of A1015 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.15 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 70 to 400
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-92

Complementary NPN transistor

The complementary NPN transistor to the A1015 is the C1815.