الوصف
This is the BC337, an NPN silicon BJT (Bipolar Junction Transistor). This little transistor can help in your project by being used to help drive large loads or amplifying or switching applications. The BC337 is specifically rated at 50V and 800mA max.
Characteristics of BC337 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 45 V
- Collector-Base Voltage, max: 50 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.8 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 100 to 630
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Complementary PNP transistor
The complementary PNP transistor to the BC337 is the BC327.
